[19a-Z14-1~11] 6.3 Oxide electronics

△ [19a-Z14-3] Interface transport property of GdTiO₃/EuTiO₃ heterostructure

〇(M1)Noriyuki Takahara¹, Kei Takahashi², Yoshinori Tokura^1,2, Masashi Kawasaki^1,2 (1.Univ. of Tokyo, 2.RIKEN CEMS)

Keywords:Oxide thin film, heterostructure

EuTiO₃(ETO) is an antiferromagnetic semiconductor and GdTiO₃(GTO) is a ferrimagnetic Mott insulator. GTO/ETO interface is a polar-discontinuity interface and electron doping to ETO layer can be expected. In this presentation, we report the physical properties of GTO/ETO heterostructures which were grown on LSAT (001) substrates by gas-source molecular beam epitaxy. We successfully found that conductive electrons are induced at the interface in the magnetic ordering of Gd³⁺ and Eu²⁺ spin moment.