[19a-Z19-1~12] 10.4 半導体スピントロニクス・超伝導・強相関

▲ [19a-Z19-2] Growth and characterization of ferromagnetic Fe-doped InAs quantum dots with high Curie temperature

〇(DC)Sriharsha Karumuri¹、Le Duc Anh^1,2,3、Masaaki Tanaka^1,4 (1.EEIS, Univ. of Tokyo、2.IEI, Univ. of Tokyo、3.PRESTO、4.CSRN, Univ. of Tokyo)

キーワード：ferromagnetic semiconductors, quantum dots, high curie temperature

Semiconductor quantum dots (QDs) have been extensively studied because of their potential to be used in devices such as highly efficient semiconductor lasers or qubits for quantum computation. Furthermore, it is expected that the low-dimensional confinement of carriers in ferromagnetic QDs allows a highly effective gate-voltage control of their magnetic properties and Curie temperature (T_C). Recently, we have reported the growth of Fe doped GaSb QDs which showed very high T_C (>400K). However, in these QDs, a new cubic phase containing Fe and Ga as primary constituents was formed instead of ZB (Ga,Fe)Sb. Here, we report the growth of Fe doped InAs QDs which have a ZB structure inside the QD and very high T_C (>300K).