[19a-Z19-1~12] 10.4 半導体スピントロニクス・超伝導・強相関

▼ [19a-Z19-3] Epitaxial strain dependence of the magnetic anisotropy of n-type ferromagnetic semiconductor (In,Fe)Sb studied by ferromagnetic resonance measurements

〇(M2)AKHIL PILLAI¹、Shobhit Goel¹、Le Duc Anh^1,2,3、Masaaki Tanaka^1,4 (1.Dept. of EEIS, Univ. of Tokyo、2.IEI, Univ. of Tokyo、3.PRESTO, JST、4.CSRN, Univ. of Tokyo)

キーワード：ferromagnetic semiconductor, ferromagnetic resonance, magneto-crystalline anisotropy

This work presents the first observation of ferromagnetic resonance (FMR) signal in the n-type ferromagnetic semiconductor (In_1-x,Fe_x)Sb (x =15%) at room temperature and the dependence of magnetic anisotropy (MA) of (In,Fe)Sb on epitaxial strain by FMR measurements. By growing (In, Fe)Sb on different buffers, epitaxial strain ranging from compressive (AlSb buffer) to tensile strain (InSb buffer) can be induced. This study shows the change in sign of magneto-crystalline component(K_i) of MA from positive (perpendicular magnetization) to negative (in-plane magnetization) on changing the strain from compressive to tensile. In all the samples, shape anisotropy (K_sh) is negative in sign and larger than K_i. Thus, the effective magnetic anisotropy (K_eff =K_sh +K_i) is always negative, and we observe in-plane magnetic anisotropy (IMA) for the samples. The control of MA of (In,Fe)Sb by tuning epitaxial strain can be utilised in the application of logic devices and non-volatile memory.