[19a-Z19-1~12] 10.4 半導体スピントロニクス・超伝導・強相関

▲ [19a-Z19-9] Full spin–orbit coefficient in semiconductor nanowires based on weak localization anisotropy under in-plane magnetic field

Toshimichi Nishimura¹、Kohei Yoshizumi¹、Takahito Saito¹、Daisuke Iizasa¹、Junsaku Nitta^1,2,3、〇Makoto Kohda^1,2,3,4 (1.Tohoku Univ.、2.CSRN、3.CSIS、4.FRiD)

キーワード：Spin orbit interaction, Semiconductor nanowires, Weak localization

Semiconductor-based nanowires are promising candidates for protecting electron spin information from randomization over time, but measuring intrinsic spin properties in the wire is a challenge as the electron’s spin is shielded from environmental stimulation, making it difficult to listen the “voice” of spin. These experiments reveal fundamental methods to determine spin properties in nanowires, namely the spin-orbit interaction, in a fully electrical way. This offers a new methodological capability to stabilize and control spin information for quantum and topological computers based on semiconductor wires.