Internal quantum efficiency of AlGaN multiple quantum wells grown on face-to-face annealed sputter-deposited AlN template

Atsushi Fujii; Ryota Oshimura; Takafumi Kusaba; Satoshi Kurai; Hideaki Murotani; Kenjiro Uesugi; Hideto Miyake; Yoichi Yamada

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[19a-Z27-1~9] 15.4 III-V-group nitride crystals

Fri. Mar 19, 2021 9:00 AM - 11:30 AM Z27 (Z27)

Ryota Ishii(Kyoto Univ.), Shugo Nitta(Nagoya Univ.)

11:00 AM - 11:15 AM

[19a-Z27-8] Internal quantum efficiency of AlGaN multiple quantum wells grown on face-to-face annealed sputter-deposited AlN template

Atsushi Fujii¹, Ryota Oshimura¹, Takafumi Kusaba¹, Satoshi Kurai¹, 〇Hideaki Murotani², Kenjiro Uesugi³, Hideto Miyake⁴, Yoichi Yamada¹ (1.Yamaguchi Univ., 2.NIT, Tokuyama Coll., 3.SPORR, Mie Univ., 4.Grad. Sch.of RIS., Mie Univ.)

Keywords:AlGaN multiple quantum wells, internal quantum efficiency, Face-to-Face annealing