The 68th JSAP Spring Meeting 2021

Presentation information

Oral presentation

17 Nanocarbon Technology » 17.3 Layered materials

[19a-Z31-1~11] 17.3 Layered materials

Fri. Mar 19, 2021 9:00 AM - 12:00 PM Z31 (Z31)

Nobuyuki Aoki(千葉大)

11:30 AM - 11:45 AM

[19a-Z31-10] Transistor type liquid sensor using vertically aligned MoS2 thin film

Joonam Kim1,2, Takenobu Funatsu1, Mutsumi Sugiyama1,2 (1.Tokyo Univ. of Sci., 2.RIST TUS)

Keywords:MoS2, Vertical aligned, Liquid sensor

MoS2, which has a layer structure, is expected to be applied to liquid sensor devices because it has excellent mobility and chemical stability even though one layer's thickness is under 1 nm. In particular, it has been reported that the sensitivity of the sensor was improved by adsorbing molecules to the sulfur vacancies of the MoS2 thin film. The layer of MoS2 is grown perpendicular to the substrate (Vertically aligned MoS2: V-MoS2) has higher sulfur vacancy density on the surface than a layer of MoS2 is grown parallel (Parallel aligned MoS2: P-MoS2) to the substrate. Hence, it was expected that the sensitivity would be improved as well. In this study, we made a transistor-type liquid sensor using P-MoS2 and V-MoS2 and examined the sensitivity characteristics.