[19a-Z33-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [19a-Z33-11] Growth mechanisms of α-Ga₂O₃ on sapphire substrate in the initial stage

〇(M1)Hitoshi Takane¹, Kentaro Kaneko¹, Yuichi Ota², Shizuo Fujita¹ (1.Kyoto Univ., 2.Tokyo Metropolitan Industrial Technology Research Inst.)

Keywords:gallium oxide, mist CVD, epitaxial growth

α-Ga₂O₃ has attracted attentions as a promissing material for future power devices. Although lattice mismatch between α-Ga₂O₃ and sapphire along a-axis is as large as ~4.8 % and α-Ga₂O₃ is reported to be synthesized under the condition of 1000 ℃•44 kbar, α-Ga2O3 can be grown under the condition of ~500 ℃ and atmosphric condition by means of mist CVD method. The reason of α-Ga₂O₃ growth by mist CVD is remain to be known. Therefore, in this study, we paid attentions to the initial stage of α-Ga₂O₃ growth by mist CVD and tried to figure out the growth mechanisms.