[19a-Z33-1~12] 21.1 合同セッションＫ 「ワイドギャップ酸化物半導体材料・デバイス」

▼ [19a-Z33-12] Characterization of γ-Al₂O₃/β-Ga₂O₃ interface with photo-assisted capacitance-voltage method

〇Nan Zhang¹、Takumi Saito¹、Kaisei Kamei¹、Takuto Soma¹、Akira Ohtomo^1,2 (1.Tokyo Tech.、2.MCES)

キーワード：Ga2O3, gamma-Al2O3, interface trap

β-Ga₂O₃ is promising for next-generation power devices such as metal-oxide-semiconductor field-effect transistors (MOSFETs). In a MOSFET, trap states residing at interface between a channel and adjacent layers influence the performance and durability. γ-Al₂O₃ is prospected as a gate oxide for β-Ga₂O₃-based MOSFET with good performance. Here we report on the electrical characterization of γ-Al₂O₃/β-Ga₂O₃ interface with photo-assisted capacitance-voltage (C-V) method for accurate estimation of interface trap density (D_it). A high breakdown electric field more than 10 MV/cm and average interface trap density smaller than amorphous Al₂O₃ were reported.