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[19a-Z33-2] Electrical Characterization of Si-Doped β-Ga2O3 (010) Single Crystals Annealed at High Temperatures
Keywords:Ga2O3, deep-level defects, annealing
We have electrically characterized Si-doped β-Ga2O3(010) single crystals annealed at high temperatures in vacuum and/or oxygen ambiences, employing capacitance-voltage, steady-state photo-capacitance spectroscopy, and variable temperture photoluminescence techniques.