[19a-Z33-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19a-Z33-3] Study on deep level in Sn-doped α-Ga₂O₃ grown on m-face sapphire by using cathodoluminescence method Ⅱ

〇Ryo Moriya¹, Junjiro Kikawa¹, Isao Takahashi², Takashi Shinohe², Xiao Shiyu³, Hideto Miyake³, Tsutomu Araki¹ (1.Ritsumeikan Unv., 2.FLOSFIA Inc., 3.Mie Unv.)

Keywords:gallium oxide, deep level, cathodoluminescence

α-Ga₂O₃ is a new wide-band-gap semiconductor which is expected to be applied to power devices. In the previous meeting, we indicated that Sn-doped m-face α-Ga₂O₃ had two band emission bands to use the cathodoluminescence method. They are a blue luminescence band (BL) at 2.8 eV and an ultraviolet luminescence band (UVL) at 3.7 eV. The origin of UVL is suggested to be the exciton (STE) by self-trapped hole (STH) from the relationship between Sn concentration and Debye length. In this meeting, we report the inferred origin of BL and UVL from the temperature dependence of CL spectra and the change of accretion voltage.