11:00 AM - 11:15 AM
[19a-Z33-8] Stacking Faults Generated from Micro Particles-Origin of Leakage Current in HVPE (001) beta-Gallium Oxide Epilayers Determined by High-Sensitive Emission Microscope
Keywords:gallium oxide, Schottky barrier diode, emission microscopy
We have found that stacking faults generated from micro particles are one of killer defects in beta-Ga2O3 SBDs by hieh-senstive emission microscopy.