[19a-Z33-1~12] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19a-Z33-8] Stacking Faults Generated from Micro Particles-Origin of Leakage Current in HVPE (001) beta-Gallium Oxide Epilayers Determined by High-Sensitive Emission Microscope

〇Makoto Kasu¹, Sayleap Sdoeung¹, Kohei Sasaki², Satoshi Masuya², Katsumi Kawasaki³, Jun Hirabayashi³, Akito Kuramata² (1.Saga Univ., 2.Novel Crystal Technology, 3.TDK Corp.)

Keywords:gallium oxide, Schottky barrier diode, emission microscopy

We have found that stacking faults generated from micro particles are one of killer defects in beta-Ga2O3 SBDs by hieh-senstive emission microscopy.