[19p-P01-1~23] 17 Nanocarbon Technology(Poster)

[19p-P01-22] p/n type control of transition metal chalcogenide atomic layer with post-doping

〇(M2)Yuya Murai¹, Zheng Liu², Toshifumi Irisawa², Takahiko Endo³, Yasumitsu Miyata³, Shoji Yoshida⁴, Susumu Okada⁴, Ryo Kitaura¹ (1.Nagoya Univ., 2.AIST, 3.Tokyo Metropolitan Univ., 4.Univ. Tsukuba)

Keywords:transition metal dichalcogenide, semiconductor, doping

The purpose of this study is to establish a highly accurate dopant introduction method for atomic layers, especially transition metal dichalcogenide (TMD) atomic layers, and to use it for p and n-type control. In this study, we focused on low-energy atomic beam irradiation as a highly controllable doping method applicable to the TMD atomic layer. It was confirmed that uniform doping is possible by irradiating the TMD atomic layer (MoSe2 and WSe2) with Nb and Re beams. The presentation will also discuss the results of detailed doping assessments and device measurements.