1:00 PM - 1:50 PM
[19p-P01-22] p/n type control of transition metal chalcogenide atomic layer with post-doping
Keywords:transition metal dichalcogenide, semiconductor, doping
The purpose of this study is to establish a highly accurate dopant introduction method for atomic layers, especially transition metal dichalcogenide (TMD) atomic layers, and to use it for p and n-type control. In this study, we focused on low-energy atomic beam irradiation as a highly controllable doping method applicable to the TMD atomic layer. It was confirmed that uniform doping is possible by irradiating the TMD atomic layer (MoSe2 and WSe2) with Nb and Re beams. The presentation will also discuss the results of detailed doping assessments and device measurements.