[19p-P02-1~22] 17 Nanocarbon Technology(Poster)

[19p-P02-13] Investigation on a resistive random-access memory using nitrogen-doped amorphous carbon

〇Itsuki Yoshihara¹, Natsumi Kameda¹, Syudai Furuichi¹, Nur Iyani Izzati Binti Ramli¹, Kazuyoshi Ueno^1,2 (1.SIT, 2.RCGI)

Keywords:amorphous carbon, ReRAM

In recent years, many of the resistive random-access memories (ReRAM) that have been actively researched use insulators. From the initial high resistance state, a current is passed to form a low resistance current filament, and the resistance changes due to a change in the oxidation state or the like. This time, we are investigating the possibility of ReRAM using carbon, and in the W/a-C:N/Pt structure using amorphous carbon with nitrogen added, unlike the conventional ReRAM, the initial resistance is low. We have observed the operation of changing the resistance of SET and RESET after passing a current and resetting to high resistance.