[19p-P02-1~22] 17 Nanocarbon Technology(Poster)

[19p-P02-8] Direct growth of graphene on GaN using Alcohol CVD

〇(M1)Shohei Yabuta¹, Shinichiro Mouri¹, Tsutomu Araki¹ (1.Ritsumeikan Univ.)

Keywords:graphene, nitride semiconductor, crystal growth

Graphene/GaN devices have been studied recently, but there is a problem that remained impurities introduced during transfer process deteriorate its performance. In this study, we have attempted to grow graphene directly on GaN substrates using alcohol CVD method. Two types of substrates, a GaN(0001) template (GaN/sapphire) and a GaN template wrapped in a copper foil, were prepared. The growth of multilayer graphene structure was confirmed by Raman spectroscopy, and we found that the Raman intensity ratio of G-mode to D-mode (G/D ratio) of copper foil-wrapped substrate was suppressed as compared with that of the GaN template.