[19p-P05-1~1] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[19p-P05-1] Electrical Properties of Multiple-Stacked InAs/GaAs Quantum Dots for Photoconductive Antenna Devices

〇Yasuo Minami¹, Ayumi Shimmen¹, Takahiro Kitada¹, Yukihiro Harada², Toshiyuki Kaizu², Osamu Kojima², Takashi Kita², Osamu Wada³ (1.Tokushima Univ., 2.Grad. Sch. of Eng., Kobe Univ., 3.Kobe Univ.)

Keywords:InAs/GaAs quantum dots, Hall measurement, Photoconductive Antenna

Electrical properties of multiple-stacked InAs/GaAs quantum dots for photoconductive antenna (PCA) devices which work in communication band with the light wavelength of 1.3, 1.5 um were measured by Hall effect measurement. From the results, it is clarified that the dominant carrier changes from electron to hole in the infrared region.