[19p-P06-1~9] 13.7 Compound and power electron devices and process technology

[19p-P06-4] Generation of hole trap in p-GaN layer by forward current injection

〇Hikaru Yoshida¹, Wakana Takeuchi¹, Yutaka Tokuda¹, Tetsuo Narita², Kazuyoshi Tomita², Tetsu Kachi³ (1.Aichi Inst. of Technol., 2.Toyota Central R&D Labs., Inc., 3.Nagoya University)

Keywords:p-GaN, Mg-doped GaN

The formation of trap HX (E_v + 0.71 eV) in MOVPE p-GaN by the minority carrier (electron) injection was investigated in the temperature range from 90 to 300 K. After the application of zero bias for the n⁺p diode to eliminate HX, the minority carrier injection was performed by the forward bias application for 10 ms at each temperature. Isothermal DLTS measurements were made at 300 K. It was found that the HX was formed by minority carrier injection even at 90 K, and increased with injection temperature and saturated above 200 K.