[19p-P06-1~9] 13.7 Compound and power electron devices and process technology

[19p-P06-9] Investigation of monolithic integrated circuit using based-on AlGaN/GaN heterostructure

〇Tomoaki Kawauchi¹, Mao Fukinaka¹, Tomoaki Mashimo¹, Hiroshi Okada¹ (1.Toyohashi Univ. Tech)

Keywords:nitride semiconductor, integrated circuit

The realization of a nitride semiconductor monolithic integrated circuit can be expected to be a compact system that is difficult with conventional technology. In order to study a monolithic integrated circuit with an AlGaN / GaN heterostructure, we designed and prototyped an inverter circuit composed of transistors and resistors, and confirmed its operation.