[19p-Z10-1~15] 3.11 Photonic structures and phenomena

[19p-Z10-13] Low-Threshold Silicon Raman Lasers Fabricated in CMOS Compatible Process

〇(B)Yuji Ota¹, Makoto Okano², Yasushi Takahashi¹ (1.Osaka Pref. Univ., 2.AIST)

Keywords:silicon Raman laser

Conventionally, silicon Raman lasers with high-Q nanocavities have been fabricated using electron beam (EB) lithography. Recently, we have demonstrated the fabrication using photolithography and CMOS-compatible processes. However, the fabrication yield was low and the threshold was several times higher than previous studies. The main reason for the performance degradation is the decrease in the Q-value of the resonant mode. In this paper, we report that we have improved the heat treatment to improve the Q-value, and achieved lower threshold and higher fabrication yields of silicon Raman lasers using a CMOS-compatible process.