[19p-Z13-1~14] 6.1 Ferroelectric thin films

△ [19p-Z13-1] Growth and ferroelectric properties of epitaxial (Al_1-xSc_x)N films.

〇Shinnosuke Yasuoka¹, Takao Shimizu², Hiroshi Funakubo¹ (1.Tokyo Tech., 2.NIMS)

Keywords:ferroelectric, nitride, thin film

The ferroelectricity of (Al_1-xSc_x)N films has reported by Fichtner et al. in 2019. Futhermore, we reported the effects of deposition conditions the ferroelectricity for uniaxially oriented (Al_1-xSc_x)N films. However, there has been no report on the ferroelectricity of an epitaxially grown (Al_1-xSc_x)N film, which has higher crystal homogeneity in the film thickness direction and is advantageous for basic evaluation than a uniaxially oriented film. In this study, we report the fabrication of (Al_1-xSc_x)N films epitaxially grown on an Al₂O₃ single crystal substrate by the dual sputtering method and evaluation of their ferroelectricity.