4:15 PM - 4:30 PM
▼ [19p-Z14-11] Proton Doping-Induced Resistance Modulation of NdNiO3 Film under Electric Fields
Keywords:perovskite rare-earth nickelate thin film, proton doping-induced resistance modulation, electric field-assisted hydrogenation
Resistive state change in strongly correlated-perovskite RNiO3 (R = rare earth elements) has the potential to enable novel electronic devices exploiting abrupt Mott phase transition. In recent years, the vast resistivity modulation in the RNiO3 family has been successfully demonstrated through ion doping via gas-phase-chemical reactions. For example, proton-doped SmNiO3 (SNO) thin film, where protons are dissociated from hydrogen molecules by utilizing Pt catalytic effect and then doped into the film, can lead to an ~108 of resistivity modulation at 300 K [1]. The colossal resistivity modulation is considered to be governed by proton motion in SNO, such as diffusion in the thin film. At the same time, the kinetics of such external control of proton diffusion, namely electric field, has not been clearly revealed.
In this work, electric-field-assisted hydrogenation and corresponding resistance modulation of NdNiO3 (NNO) thin film resistors were systematically studied as a function of temperature and dc electric bias. Catalytic Pt electrodes serve as triple phase boundaries for hydrogen incorporation into a perovskite lattice. A kinetic model describing the relationship between resistance modulation and proton diffusion was proposed by considering the effect of the electric field during hydrogenation [2]. An electric field, in addition to thermal activation, is demonstrated to effectively control the proton distribution along its gradient with an efficiency of ~22% at 2 × 105 V/m. The combination of an electric field and gas-phase annealing is shown to enable the elegant control of the diffusional doping of complex oxides.
[1] Shi, J.; et al. Nat. Commun. 2014, 5, 4860
[2] Sidik, U.; et al. ACS Appl. Mater. Interfaces 2020, 12, 54955–54962
In this work, electric-field-assisted hydrogenation and corresponding resistance modulation of NdNiO3 (NNO) thin film resistors were systematically studied as a function of temperature and dc electric bias. Catalytic Pt electrodes serve as triple phase boundaries for hydrogen incorporation into a perovskite lattice. A kinetic model describing the relationship between resistance modulation and proton diffusion was proposed by considering the effect of the electric field during hydrogenation [2]. An electric field, in addition to thermal activation, is demonstrated to effectively control the proton distribution along its gradient with an efficiency of ~22% at 2 × 105 V/m. The combination of an electric field and gas-phase annealing is shown to enable the elegant control of the diffusional doping of complex oxides.
[1] Shi, J.; et al. Nat. Commun. 2014, 5, 4860
[2] Sidik, U.; et al. ACS Appl. Mater. Interfaces 2020, 12, 54955–54962