[19p-Z14-1~18] 6.3 Oxide electronics

△ [19p-Z14-17] Characteristics of resistive switching devices using surface oxide film of Ta doped liquid metal alloy

〇Naoki Maeda¹, Takahiko Ban¹, Shinichi Yamamoto¹ (1.Ryukoku Univ)

Keywords:liquid metal alloy, resistive switching device

Ga is a liquid metal with a melting point of 30°C. It is a material with high electrical and thermal conductivity as well as high flexibility. In this study, we fabricated a resistance change device using a liquid metal alloy of Ga, In, and Sn alloyed in the ratio of 68.5:21.5:10.0 with 1wt of Ta. We also succeeded in transferring the surface oxide film of the liquid metal alloy.