[19p-Z15-1~11] 6.4 Thin films and New materials

[19p-Z15-7] Electron transport properties of tin oxynitride thin films

〇Masato Tsuchii¹, Yasushi Hirose¹, Tetsuya Hasegawa¹ (1.Univ. of Tokyo)

Keywords:oxynitride, thin films, tin compounds

In this study, we investigated the electron transport properties of tin oxynitride (SnON) thin films for the application toward photo electrodes or photo sensors. SnON thin films were epitaxially grown on MgO(100), YSZ(111) single-crystalline substrates by reactive sputtering method. All thin films were n type semiconductor with high residual carrier density around 10²⁰ cm^-3, and epitaxial thin films exhibited higher carrier mobility compared to the previous research (~30 cm²V^-1s^-1).