[19p-Z16-1~6] 9.3 Nanoelectronics

[19p-Z16-1] Observation of thermoelectric effect in a nanometer-scale Si MOSFET by using single-electron counting statistics

〇Kensaku Chida¹, Akira Fujiwara¹, Katsuhiko Nishiguchi¹ (1.NTT BRL)

Keywords:Silicon nanodevice, Electron counting statistics, Thermoelectric effect

We obtained the local temperature in a nanometer-scale Si MOSFET by using electron counting statistics (ECS). ECS offers us direct information on transferring electron. Since the transferring electrons hop over a 50-nm-long energy barrier that is created by a Si MOSFET, ECS enables us to determine temperature difference across the Si MOSFET. In addition, by using the charging energy as an absolute energy scale, we determined the Seebeck voltage across the 50-nm-long energy barrier and derived the Seebeck coefficient of the nanometer-scale Si MOSFET. Our results indicate that ECS is a beneficial tool to study thermoelectricity in nanometer-scale devices.