[19p-Z22-1~16] 3.13 Semiconductor optical devices

[19p-Z22-9] Fabrication and characterization of 1550 nm band InAs/InGaAlAs quantum dot DFB laser

〇Ryosuke Morita¹, Runa Kaneko¹, Katsuhara Ryumi¹, Matsumoto Atsushi², Akahane Kouichi², Matsushima Yuichi¹, Ishikawa Hiroshi¹, Utaka Katsuyuki¹ (1.Waseda Univ., 2.NICT)

Keywords:quantum dot

Recently, to deal with the capacity of optical fiber communication by ultra-high density wavelength division multiplexing and digital coherence, it is essential to develop communication laser with high single wavelength selectivity. This time, 1550 nm band the highly-stacked quantum dot DFB laser is fabricated by a single process after growth and report its characteristics.