The 68th JSAP Spring Meeting 2021

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13 Semiconductors » 13.7 Compound and power electron devices and process technology

[19p-Z25-1~14] 13.7 Compound and power electron devices and process technology

Fri. Mar 19, 2021 1:00 PM - 4:45 PM Z25 (Z25)

Masashi Kato(Nagoya Inst. of Tech.)

1:00 PM - 1:15 PM

[19p-Z25-1] Electric Properties of GaN channel HEMTs on High Resistivity GaN Substrates

〇Takuya Hoshi1, Yuki Yoshiya1, Hiroki Sugiyama1, Hideaki Matsuzaki1 (1.NTT Device Technology Labs.)

Keywords:High Resistivity GaN Substrates, GaN channel HEMTs