[19p-Z25-1~14] 13.7 Compound and power electron devices and process technology

△ [19p-Z25-11] Fabrication of N-polar GaN/AlGaN heterostructure on a 6 inch Si (100) substrate by epitaxial-layer transfer technique

〇Yuki Yoshiya¹, Takuya Hoshi¹, Hiroki Sugiyama¹, Hideaki Matsuzaki¹ (1.NTT Device Technology Labs)

Keywords:Galium nitride, N-polar, epitaxial-layer transfer