[19p-Z25-1~14] 13.7 Compound and power electron devices and process technology

▲ [19p-Z25-14] 2608 V Operation of NO₂-Doped p-channel Diamond MOSFETs

〇Niloy Chandra Saha¹, SeongWoo Kim², Toshiyuki Oishi¹, Yuki Kawamata², Koji Koyama², Makoto Kasu¹ (1.Saga Univ., 2.Adamant Namiki Precision Jewel Co., Ltd.)

Keywords:heteroepitaxial diamond, High breakdown voltage, NO2 doping

Diamond possesses a very high breakdown field of more than10 MV/cm and thermal conductivity of 22 W/cm·K. We demonstrated NO₂-doped p-channel diamond MOSFETs with both high current and voltage operation that leads to an available output power density of 145 MW/cm². In this work, by using a passivation layer, we demonstrate NO₂-doped p-channel diamond MOSFETs with a greatly increased breakdown voltage (2608 V). The lateral breakdown field of the MOSFETs increased from 1.2 to 2.37 MV/cm.