[19p-Z25-1~14] 13.7 Compound and power electron devices and process technology

△ [19p-Z25-7] Fabrication of AlGaN/GaN HBT with Continuous-grown N-p-n Junctions

〇(M2)Takeru Kumabe¹, Yuto Ando¹, Hirotaka Watanabe², Manato Deki^1,3, Atsushi Tanaka⁴, Shugo Nitta², Yoshio Honda², Hiroshi Amano^2,3,4,5 (1.Nagoya Univ., 2.IMaSS Nagoya Univ., 3.VBL Nagoya Univ., 4.NIMS, 5.ARC Nagoya Univ.)

Keywords:GaN, Heterojunction Bipolar Transistor