[19p-Z27-1~14] 15.4 III-V-group nitride crystals

△ [19p-Z27-3] Crystal growth of high temperature AlN on AlN template

〇(M1)Shota Tsuda², Reiya Aono², Yuya Ageta², Takumi Miyagawa², Hideki Hirayama^1,3, Yusuke Takashima², Yoshiki Naoi^1,2, Kentaro Nagamatsu^1,2 (1.Tokushima Univ.pLED, 2.Faculty of Science and Engineering,Tokushima Univ., 3.RIKEN)

Keywords:MOVPE, AlN, high temperature growth

The typical epitaxial growth is important underling layer for reduce dislocation, because the growth layer dislocation is transfared from underling layer. It has been reported, dislocation tilt angle in AlGaN growth were determined strain, the dislocation densities are improved by formed loop. In this study, AlN were grown at the high temperature from 1200 to 1650℃ on the AlN template on sapphire. As a result, the dislocation densities were decrease with increase temperature.