Growth of tunnel junction on m-plane GaN substrate for its introduction to multi-quantum shell devices

Shiori Yamamura; Yoshiya Miyamoto; Naoki Sone; Weifang Lu; Renji Okuda; Kazuma Ito; Yukimi Jinno; Nanami Nakayama; Sae Katsuro; Koji Okuno; Koichi Mizutani; Kazuyoshi Iida; Satoshi Kamiyama; Tetsuya Takeuchi; Motoaki Iwaya; Isamu Akasaki

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[19p-Z27-1~14] 15.4 III-V-group nitride crystals

Fri. Mar 19, 2021 1:00 PM - 5:00 PM Z27 (Z27)

Hiroto Sekiguchi(Toyohashi Univ. of Tech.), Momoko Deura(Univ. of Tokyo), Kenjiro Uesugi(Mie Univ.)

3:00 PM - 3:15 PM

△ [19p-Z27-8] Growth of tunnel junction on m-plane GaN substrate for its introduction to multi-quantum shell devices

〇Shiori Yamamura¹, Yoshiya Miyamoto¹, Naoki Sone^1,3, Weifang Lu¹, Renji Okuda¹, Kazuma Ito¹, Yukimi Jinno¹, Nanami Nakayama¹, Sae Katsuro¹, Koji Okuno^4,1, Koichi Mizutani⁴, Kazuyoshi Iida^1,4, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Isamu Akasaki^1,2 (1.Meijo Univ., 2.Akasaki Research Center, Nagoya Univ., 3.Koito Manufacturing CO., 4.TOYODA GOSEI CO.,Ltd)

Keywords:MOVPE, m-plane GaN substrate