[19p-Z29-1~13] 15.7 Crystal characterization, impurities and crystal defects

[19p-Z29-3] Free-to-bound emission from C_iO_i defects in electron-irradiated Si

〇Michio Tajima^1,2, Shota Asahara¹, Yuta Satake¹, Atsushi Ogura¹ (1.Meiji Univ., 2.NPERC-J)

Keywords:photoluminescence, silicon, CiOi defect

We determined the entire spectral shape of a broad band around 0.8 eV, previously termed the C08-band, which was observed commonly in Si by room-temperature photoluminescence after electron irradiation. The band has a peak at 0.77±0.01 eV with long tails on both sides. We identified that the C08-band has the same origin as the C-line and occurs as a result of the recombination between a free electron and a hole bound by the deep trap due to the interstitial C and O defects (C_iO_i). The long tails were explained by the superposition of phonon sidebands. We believe that the ability of the direct assessment of the C_iO_i hole trap at room temperature has many potential applications including lifetime control, analysis of process-induced damage, and elucidation of device degradation mechanism.