Analysis of local strain fields around individual threading dislocations in HVPE-GaN bulk crystals by using nanobeam X-Ray diffraction

Takeaki Hamachi; Tetsuya Tohei; Yusuke Hayashi; Shigeyoshi Usami; Masayuki Imanishi; Yusuke Mori; Kazushi Sumitani; Yasuhiko Imai; Shigeru Kimura; Akira Sakai

Presentation information

Oral presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[19p-Z29-1~13] 15.7 Crystal characterization, impurities and crystal defects

Fri. Mar 19, 2021 1:00 PM - 4:45 PM Z29 (Z29)

Kazuhisa Torigoe(SUMCO), Takuo Sasaki(QST)

2:15 PM - 2:30 PM

△ [19p-Z29-5] Analysis of local strain fields around individual threading dislocations in HVPE-GaN bulk crystals by using nanobeam X-Ray diffraction

〇Takeaki Hamachi¹, Tetsuya Tohei¹, Yusuke Hayashi¹, Shigeyoshi Usami², Masayuki Imanishi², Yusuke Mori², Kazushi Sumitani³, Yasuhiko Imai³, Shigeru Kimura³, Akira Sakai¹ (1.Grad. Sch. of Eng. Sci., Osaka Univ., 2.Grad. Sch. of Eng., Osaka Univ., 3.JASRI)

Keywords:Gallium Nitride, Threading dislocation, X-ray diffraction