[19p-Z29-1~13] 15.7 Crystal characterization, impurities and crystal defects

△ [19p-Z29-9] Numerical analysis on crystallization-interface-shape deformation of 200 mm (8 inch) FZ silicon during crystal growth process

〇Kendai Miyata¹, Xue-Feng Han², Satoshi Nakano², Xin Liu², Koichi Kakimoto^1,2 (1.Kyushu Univ., 2.RIAM, Kyushu Univ.)

Keywords:FZ silicon, simulation, S/L interface

In order to investigate the deformation of the crystallization interface during the crystal growth process of silicon produced by the FZ method, the three-dimensional numerical analysis of the silicon single crystal growth process with Halbach array is performed. The simulation model is created considering the high frequency electromagnetic field (HF-EM) field, static magnetic field, fluid flow, and heat transfer in the calculation. The calculation results suggest that deflection of the crystallization interface is sensitive to the downstream near the center of the melt.