The 68th JSAP Spring Meeting 2021

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19p-Z33-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Mar 19, 2021 1:30 PM - 6:00 PM Z33 (Z33)

Yasuaki Ishikawa(Aoyama Gakuin Univ.), Kohei Fujiwara(Tohoku Univ.), Akifumi Matsuda(Tokyo Tech)

2:30 PM - 2:45 PM

△ [19p-Z33-5] Thermal stability of resistance of ion-implanted amorphous-InGaZnO film

〇Keisuke Yasuta1, Toshimasa Ui1, Junichi Tatemichi1 (1.NISSIN ION EQUIPMENT)

Keywords:InGaZnO, ion implantation, thermal stability