The 68th JSAP Spring Meeting 2021

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21 Joint Session K "Wide bandgap oxide semiconductor materials and devices" » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[19p-Z33-1~16] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Fri. Mar 19, 2021 1:30 PM - 6:00 PM Z33 (Z33)

Yasuaki Ishikawa(Aoyama Gakuin Univ.), Kohei Fujiwara(Tohoku Univ.), Akifumi Matsuda(Tokyo Tech)

2:45 PM - 3:00 PM

△ [19p-Z33-6] Crystallinity and electrical properties of SPC-In2O3:H for thin-film transistors

〇(M1)Taiki Kataoka1, Mamoru Furuta1,2 (1.Kochi Univ. of Tech, 2.Center for Nanotechnology Kochi Univ. of Tech)

Keywords:oxide semiconductor, solid faze crystallization, thin film transistor