Hayato Hasebe

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Speaker, Author, Co-Author

Fri. Sep 23, 2022 9:00 AM - 12:15 PM C101 (C101)

Oral presentation
| 13 Semiconductors
| 13.2 Exploratory Materials, Physical Properties, Devices

[23a-C101-1~12] 13.2 Exploratory Materials, Physical Properties, Devices

10:00 AM - 10:15 AM

[23a-C101-5] Fabrication of high Hall density p-type B-doped BaSi₂ films formed by sputtering

〇Hayato Hasebe¹, Kazuki Kido¹, Haruki Takenaka¹, Masami Mesuda², Kaoru Toko¹, Takashi Suemasu¹ (1.Tsukuba Univ., 2.Tosoh Corp.)