Hiroki Imabayashi

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Speaker, Author, Co-Author

Tue. Sep 20, 2022 4:00 PM - 6:00 PM P04 (Arena)

Poster presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[20p-P04-1~21] 13.7 Compound and power devices, process technology and characterization

4:00 PM - 6:00 PM

[20p-P04-20] Mapping of Ultra-High-Pressure Annealed n-GaN Schottky Contacts Using Scanning Internal Photoemission Microscopy

〇Hiroki Imabayashi¹, Kenji Shiojima¹, Tetsu Kachi² (1.Univ. of Fukui, 2.Nagoya Univ.)

Thu. Sep 22, 2022 1:30 PM - 6:15 PM B204 (B204)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[22p-B204-1~18] 13.7 Compound and power devices, process technology and characterization

5:15 PM - 5:30 PM

[22p-B204-15] Two-dimensional characterization of the edge structure of Ni/n-GaN Schottky contacts under applied voltage by scanning internal photoemission microscopy

〇Hiroki Imabayashi¹, Fumimasa Horikiri², Yoshinobu Narita², Noboru Fukuhara², Tomoyoshi Mishima³, Kenji Shiojima¹ (1.Univ. of Fukui, 2.SCIOCS, 3.Hosei Univ.)

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