Shunta Harada

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Speaker, Author, Co-Author

Tue. Sep 20, 2022 1:30 PM - 3:45 PM C306 (C306)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[20p-C306-1~9] 15.6 Group IV Compound Semiconductors (SiC)

2:15 PM - 2:30 PM

[20p-C306-4] 【Highlighted Presentation】Suppression of partial dislocation glide on the basal plan in SiC epitaxial layer by proton implantation

〇Shunta Harada¹, Hitoshi Sakane², Toshiki Mii³, Masashi Kato³ (1.Nagoya Univ., 2.SHI-ATEX, 3.Nagoya Inst, Tech.)