Haruki Fujii

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Speaker, Author, Co-Author

Wed. Sep 21, 2022 9:00 AM - 12:30 PM M206 (Multimedia Research Hall)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power devices, process technology and characterization

[21a-M206-1~13] 13.7 Compound and power devices, process technology and characterization

9:15 AM - 9:30 AM

△ [21a-M206-2] Deep levels formed near the SiO₂/SiC interface by thermal oxidation of SiC

〇Haruki Fujii¹, Kazutaka Kanegae¹, Mitsuaki Kaneko¹, Tsunenobu Kimoto¹ (1.Kyoto Univ.)