Daisuke Ohori

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Speaker, Author, Co-Author

Thu. Sep 22, 2022 1:00 PM - 5:00 PM A406 (A406)

Oral presentation
| 8 Plasma Electronics
| 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[22p-A406-1~15] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

3:30 PM - 3:45 PM

[22p-A406-10] Room-temperature Growth of HfO₂/SiO₂ film by Neutral Beam Enhanced Atomic Layer Deposition with Electrical Characteristics

〇Daisuke Ohori¹, Yi-Ho Chen², Takuya Ozaki¹, Kazuhiko Endo³, Yiming Li², Seiji Samukawa^2,1,4 (1.IFS, Tohoku Univ., 2.NYCU, 3.AIST, 4.AIMR, Tohoku Univ.)

Thu. Sep 22, 2022 9:45 AM - 12:00 PM C102 (C102)

Oral presentation
| 22 Joint Session M "Phonon Engineering"
| 22.1 Joint Session M "Phonon Engineering"

[22a-C102-1~8] 22.1 Joint Session M "Phonon Engineering"

11:15 AM - 11:30 AM

[22a-C102-6] Effect on Phonon field by Changing Nanopillar Gap in Si Nanopillar/SiGe composite film

Asahi Sato¹, 〇Daisuke Ohori¹, Min-hui Chuang³, Masayuki Murata⁴, Atsushi Yamamoto⁴, Yiming Li³, Kazuhiko Endo⁴, Seiji Samukawa^3,1,2 (1.IFS, Tohoku Univ., 2.AIMR, Tohoku Univ., 3.NYCU, 4.AIST)

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