[20p-B202-1~11] 15.4 III-V-group nitride crystals

Tue. Sep 20, 2022 1:30 PM - 4:30 PM B202 (B202)

Kazunobu Kojima(Osaka Univ.), Hideaki Murotani(Tokuyama College)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

[20p-B202-1] Analysis of Indium composition dependence on interfacial phonon transport in InGaN films

〇(M1)Tatsuya Asaji¹, Tomoya Nakayama¹, Daisuke Iida², Mohammed A Najimi², Kazuhiro Ohkawa², Yoshihiro Ishitani¹ (1.Chiba Univ., 2.KAUST)

1:45 PM - 2:00 PM

△ [20p-B202-2] Separated Evaluation of Radiative and Non-Radiative Recombination Lifetimes in Ion-implanted InGaN Quantum Wells

〇Keito Mori¹, Yuya Morimoto¹, Ryo Yamahida¹, Hiroto Imashiro¹, Saki Kashiwagi¹, Taiga Takano¹, Haruka Ishida¹, Atsushi Yamaguchi¹, Susumu Kusanagi², Yuya Kanitani², Yoshihiro Kudo², Shigetaka Tomiya² (1.Kanazawa Inst. Tech., 2.Sony Group Corp.)

2:00 PM - 2:15 PM

▲ [20p-B202-3] Temperature-dependent microphotoluminescence study on green-emitting InGaN/GaN single quantum well grown on epitaxially laterally overgrown GaN

〇Zhaozong Zhang¹, Ryota Ishii¹, Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ.)

2:15 PM - 2:30 PM

[20p-B202-4] Luminescence studies of bulk GaN crystals grown by the LPAAT method (2)

〇Kohei Shima¹, Kouhei Kurimoto², Quanxi Bao², Yutaka Mikawa³, Toru Ishiguro¹, Shigefusa Chichibu¹ (1.IMRAM-Tohoku Univ., 2.Japan Steel Works, 3.Mitsubishi Chemical Corp.)

2:30 PM - 2:45 PM

[20p-B202-5] Room-temperature photoluminescence lifetime of c-plane AlInN on GaN

〇Liyang Li¹, Kohei Shima¹, Mizuki Yamanaka², Takashi Egawa², Tetsuya Takeuchi³, Makoto Miyoshi², Shoji Ishibashi⁴, Akira Uedono⁵, Shigefusa F. Chichibu¹ (1.IMRAM-Tohoku Univ., 2.Nagoya Inst. Tech., 3.Meijo Univ., 4.AIST, 5.Univ. of Tsukuba)

3:00 PM - 3:15 PM

[20p-B202-6] Highly efficient luminescence from semipolar AlGaN quantum wells emitting at below 250 nm

〇(D)Ryota Akaike¹, Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ.)

3:15 PM - 3:30 PM

△ [20p-B202-7] Cathodoluminescence intensity line profile at threading dislocations of AlGaN quantum wells on sputtered AlN templates

〇Megumi Fujii¹, Yuta Onishi¹, Kousuke Inai¹, Ryota Oshimura¹, Satoshi Kurai¹, Narihito Okada¹, Kenjiro Uesugi^2,3, Hideto Miyake⁴, Yoichi Yamada¹ (1.Yamaguchi Univ., 2.MRPCO, Mie Univ., 3.Grad. School of RIS, Mie Univ., 4.Grad. School of Eng, Mie Univ.)

3:30 PM - 3:45 PM

[20p-B202-8] Internal quantum efficiency of AlGaN-based multiple quantum wells with emission band at around 230 nm

Kunio Himeno¹, Kaichi Tani¹, Hiromasa Hayashi¹, 〇Hideaki Murotani², Satoshi Kurai¹, Narihito Okada¹, Noritoshi Maeda³, Hideki Hirayama³, Yoichi Yamada¹ (1.Yamaguchi Univ., 2.NIT, Tokuyama Coll., 3.RIKEN)

3:45 PM - 4:00 PM

△ [20p-B202-9] Excitation wavelength dependence of optically-pumped deep UV stimulated emission from AlGaN-based quantum wells

〇Kunio Himeno¹, Hiroki Nakao¹, Hayate Okawara¹, Hideaki Murotani², Satoshi Kurai¹, Narihito Okada¹, M.Ajmal Khan³, Noritoshi Maeda³, Masafumi Jo³, Hideki Hirayama³, Yoichi Yamada¹ (1.Yamaguchi Univ., 2.NIT, Tokuyama Coll., 3.RIKEN)

4:00 PM - 4:15 PM

[20p-B202-10] Epitaxially laterally overgrown AlGaN quantum wells studied by time-integrated and -resolved photoluminescence from cryogenic to above room temperatures

〇Shiki Tanaka¹, Ryota Ishii¹, Norman Susilo², Tim Wernicke², Michael Kneissl², Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ., 2.TU. Berlin)

4:15 PM - 4:30 PM

[20p-B202-11] Observation and origin of stimulated emission from hydride vapor-phase epitaxy grown AlN substrates

〇Ryota Ishii¹, Tatsuya Hitomi², Toru Nagashima², Reo Yamamoto², Mitsuru Funato¹, Yoichi Kawakami¹ (1.Kyoto Univ., 2.Tokuyama Corp.)

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