Oral presentation

6 Thin Films and Surfaces » 6.3 Oxide electronics

[20p-B204-1~13] 6.3 Oxide electronics

Tue. Sep 20, 2022 1:30 PM - 5:00 PM B204 (B204)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:30 PM - 1:45 PM

△ [20p-B204-1] Li-content control of superconducting Li_1-xNbO₂ films by solution treatments

〇(M2)Aya Sato¹, Takuto Soma¹, Hiroshi Kumigashira^2,3, Akira Ohtomo¹ (1.Tokyo Tech., Dept. Chem. Sci. Eng., 2.KEK-IMSS, 3.Tohoku Univ., IMRAM)

1:45 PM - 2:00 PM

△ [20p-B204-2] Superconductivity in pseudo-rocksalt structure Nb₃O₃ epitaxial thin films

〇(M1)Rintaro Kimura¹, Yasumichi Cho¹, Kenichi Kaminaga¹, Shingo Maruyama¹, Yuji Matsumoto¹ (1.Tohoku Grad. Sch.)

2:00 PM - 2:15 PM

△ [20p-B204-3] Fabrication of High-Quality Sr₃Ru₂O₇ Thin Films by Molecular Beam Epitaxy

〇(M1)Ren Ooshiro¹, Shinichi Nishihaya¹, Takahiro Fujita², Masashi Kawasaki^2,3, Masaki Uchida¹ (1.Tokyo Tech, 2.The Univ. of Tokyo, 3.Riken CEMS)

2:15 PM - 2:30 PM

▼ [20p-B204-4] Deep-UV transparent conducting SrSnO₃ freestanding sheet using Al₂O₃ protection layer

〇(D)Lizhikun Gong¹, Mian Wei¹, Rui Yu¹, Hiromichi Ohta², Katayama Tsukasa^2,3 (1.IST, Hokkaido Univ., 2.RIES, Hokkaido Univ., 3.JST-PRESTO)

2:30 PM - 2:45 PM

△ [20p-B204-5] Fabrication and transport properties of SrFeO₃/LaNiO₃ heterostructures with polar interfaces

〇(M1)Yuki Honda¹, Takuto Soma¹, Akira Ohtomo¹ (1.Tokyo Inst.)

2:45 PM - 3:00 PM

△ [20p-B204-6] Fabrication of GdMnO₃/LaNiO₃ superlattice structure by pulse-laser deposition

〇yuta yamagishi¹, sahoo ramchandra¹, soma takuto¹, ohtomo akira¹ (1.Tokyo Tech.)

3:15 PM - 3:30 PM

[20p-B204-7] Metal-insulator transition of Ti₂O₃ predicted by density functional theory

〇Kouhei Yoshimatsu¹, Naoto Hasegawa¹, Hiroshi Kumigashira¹ (1.IMRAM, Tohoku Univ.)

3:30 PM - 3:45 PM

△ [20p-B204-8] Fermi surface of Ti₂O₃ films determined by angle-resolved photoemission spectroscopy

〇(D)Naoto Hasegawa¹, Kohei Yoshimatsu¹, Daisuke Shiga¹, Tatsuhiko Kanda¹, Satoru Miyazaki¹, Miho Kitamura², Koji Horiba², Hiroshi Kumigashira^1,2 (1.IMRAM, Tohoku Univ., 2.IMSS, KEK)

3:45 PM - 4:00 PM

▼ [20p-B204-9] AMoO₂ (A = Li, Na, K): Two-dimensional Mott insulators with tunable MoO₂ interlayer distance

〇(D)Shuxin Zhang¹, Takuto Soma¹, Akira Ohtomo¹ (1.Tokyo Tech.)

4:00 PM - 4:15 PM

△ [20p-B204-10] Fabrication of Pr₂Ir₂O₇thin film by MBE and solid phase epitaxy

〇(M1)Shunji Oishi¹, Seiya Yokokura², Toshihiro Shimada², Taro Nagahama² (1.CSE, Hokkaido Univ., 2.Eng., Hokudai Univ .)

4:15 PM - 4:30 PM

△ [20p-B204-11] Fabrication of single oriented VO₂ thin films via topotactic oxidation

〇Hisato Nishii¹, Yuya Matamura¹, Takumi Ikenoue¹, Masao Miyake¹, Tetsuji Hirato¹ (1.Kyoto Univ.)

4:30 PM - 4:45 PM

△ [20p-B204-12] Topochemical reductive epitaxy of V_xO_y thin films by uniaxial compressive annealing

〇Hiroki Shoji¹, Reo Kato¹, Kenta Kaneko¹, Satoru Kaneko^2,1, Mamoru Yoshimoto¹, Akifumi Matsuda¹ (1.Tokyo Tech, 2.KISTEC)

4:45 PM - 5:00 PM

△ [20p-B204-13] Phase transition of epitaxial cobalt oxide films by vacuum ultraviolet light irradiation

〇Kenta Kaneko¹, Hiroki Shoji¹, Yuchi Qiao¹, Tomoaki Oga¹, Satoru Kaneko^2,1, Mamoru Yoshimoto¹, Akifumi Matsuda¹ (1.Tokyo Tech, 2.KISTEC)

Session information

[20p-B204-1~13] 6.3 Oxide electronics

△ [20p-B204-1] Li-content control of superconducting Li_1-xNbO₂ films by solution treatments

△ [20p-B204-2] Superconductivity in pseudo-rocksalt structure Nb₃O₃ epitaxial thin films

△ [20p-B204-3] Fabrication of High-Quality Sr₃Ru₂O₇ Thin Films by Molecular Beam Epitaxy

▼ [20p-B204-4] Deep-UV transparent conducting SrSnO₃ freestanding sheet using Al₂O₃ protection layer

△ [20p-B204-5] Fabrication and transport properties of SrFeO₃/LaNiO₃ heterostructures with polar interfaces

△ [20p-B204-6] Fabrication of GdMnO₃/LaNiO₃ superlattice structure by pulse-laser deposition

[20p-B204-7] Metal-insulator transition of Ti₂O₃ predicted by density functional theory

△ [20p-B204-8] Fermi surface of Ti₂O₃ films determined by angle-resolved photoemission spectroscopy

▼ [20p-B204-9] AMoO₂ (A = Li, Na, K): Two-dimensional Mott insulators with tunable MoO₂ interlayer distance

△ [20p-B204-10] Fabrication of Pr₂Ir₂O₇thin film by MBE and solid phase epitaxy

△ [20p-B204-11] Fabrication of single oriented VO₂ thin films via topotactic oxidation

△ [20p-B204-12] Topochemical reductive epitaxy of V_xO_y thin films by uniaxial compressive annealing

△ [20p-B204-13] Phase transition of epitaxial cobalt oxide films by vacuum ultraviolet light irradiation

Authenticate

Session information

[20p-B204-1~13] 6.3 Oxide electronics

△ [20p-B204-1] Li-content control of superconducting Li1-xNbO2 films by solution treatments

△ [20p-B204-2] Superconductivity in pseudo-rocksalt structure Nb3O3 epitaxial thin films

△ [20p-B204-3] Fabrication of High-Quality Sr3Ru2O7 Thin Films by Molecular Beam Epitaxy

▼ [20p-B204-4] Deep-UV transparent conducting SrSnO3 freestanding sheet using Al2O3 protection layer

△ [20p-B204-5] Fabrication and transport properties of SrFeO3/LaNiO3 heterostructures with polar interfaces

△ [20p-B204-6] Fabrication of GdMnO3/LaNiO3 superlattice structure by pulse-laser deposition

[20p-B204-7] Metal-insulator transition of Ti2O3 predicted by density functional theory

△ [20p-B204-8] Fermi surface of Ti2O3 films determined by angle-resolved photoemission spectroscopy

▼ [20p-B204-9] AMoO2 (A = Li, Na, K): Two-dimensional Mott insulators with tunable MoO2 interlayer distance

△ [20p-B204-10] Fabrication of Pr2Ir2O7 thin film by MBE and solid phase epitaxy

△ [20p-B204-11] Fabrication of single oriented VO2 thin films via topotactic oxidation

△ [20p-B204-12] Topochemical reductive epitaxy of VxOy thin films by uniaxial compressive annealing

△ [20p-B204-13] Phase transition of epitaxial cobalt oxide films by vacuum ultraviolet light irradiation

Authenticate

△ [20p-B204-1] Li-content control of superconducting Li_1-xNbO₂ films by solution treatments

△ [20p-B204-2] Superconductivity in pseudo-rocksalt structure Nb₃O₃ epitaxial thin films

△ [20p-B204-3] Fabrication of High-Quality Sr₃Ru₂O₇ Thin Films by Molecular Beam Epitaxy

▼ [20p-B204-4] Deep-UV transparent conducting SrSnO₃ freestanding sheet using Al₂O₃ protection layer

△ [20p-B204-5] Fabrication and transport properties of SrFeO₃/LaNiO₃ heterostructures with polar interfaces

△ [20p-B204-6] Fabrication of GdMnO₃/LaNiO₃ superlattice structure by pulse-laser deposition

[20p-B204-7] Metal-insulator transition of Ti₂O₃ predicted by density functional theory

△ [20p-B204-8] Fermi surface of Ti₂O₃ films determined by angle-resolved photoemission spectroscopy

▼ [20p-B204-9] AMoO₂ (A = Li, Na, K): Two-dimensional Mott insulators with tunable MoO₂ interlayer distance

△ [20p-B204-10] Fabrication of Pr₂Ir₂O₇thin film by MBE and solid phase epitaxy

△ [20p-B204-11] Fabrication of single oriented VO₂ thin films via topotactic oxidation

△ [20p-B204-12] Topochemical reductive epitaxy of V_xO_y thin films by uniaxial compressive annealing