〇KYOHEI YOSHIDA¹, Masaki Koga², Takakuni Shimizu², Makoto Takafuji³, Shoji Nagaoka^1,4 (1.Kumamoto Industrial Research Institute, 2.Hamada Heavy Industries Ltd., 3.Faculty of Advanced Science and Technology, Kumamoto University, Kumamoto univ., 4.Kumamoto Innovative Development Organization, Kumamoto Univ.)

3:30 PM - 3:45 PM

[20p-C306-9] Lowest Concentration of ClF₃ gas for CVD Reactor Cleaning by Detaching SiC Film

Yuika Takizawa¹, 〇Hitoshi Habuka¹, Akio Ishiguro², Shigeaki Ishii², Toru Watanabe², Yoshikazu Moriyama², Yoshiaki Daigo², Ichiro Mizushima², Yoshinao Takahashi³ (1.Yokohama Nat. Univ., 2.NuFlare Technology, 3.KANTO DENKA KOGYO)

Session information

[20p-C306-1~9] 15.6 Group IV Compound Semiconductors (SiC)

[20p-C306-1] [INVITED] Theoretical Study of Hydrogen Adsorption on SiC Vicinal Surface under CVD Growth Condition

[20p-C306-2] Analysis of Relaxation Time for Nitrogen Adatoms to Enter Steps on Misoriented (0001) Surfaces during Homoepitaxial Growth of 4H-SiC

[20p-C306-3] Coalescence of double-rhombic 1SSF expanded from half-loop arrays in 4H-SiC

[20p-C306-4] 【Highlighted Presentation】Suppression of partial dislocation glide on the basal plan in SiC epitaxial layer by proton implantation

△ [20p-C306-5] Suppression of stacking fault expansion in SiC PiN diodes by H+implantation

[20p-C306-6] Surface recombination velocities for oxidized 4H-SiC

△ [20p-C306-7] Electron mobility in sulfur-implanted n-type SiC
investigated by Hall effect measurement

[20p-C306-8] One-step mirror finishing of SiC wafer by chitosan/diamond composite spherical microbeads

[20p-C306-9] Lowest Concentration of ClF₃ gas for CVD Reactor Cleaning by Detaching SiC Film

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Session information

[20p-C306-1~9] 15.6 Group IV Compound Semiconductors (SiC)

[20p-C306-1] [INVITED] Theoretical Study of Hydrogen Adsorption on SiC Vicinal Surface under CVD Growth Condition

[20p-C306-2] Analysis of Relaxation Time for Nitrogen Adatoms to Enter Steps on Misoriented (0001) Surfaces during Homoepitaxial Growth of 4H-SiC

[20p-C306-3] Coalescence of double-rhombic 1SSF expanded from half-loop arrays in 4H-SiC

[20p-C306-4] 【Highlighted Presentation】Suppression of partial dislocation glide on the basal plan in SiC epitaxial layer by proton implantation

△ [20p-C306-5] Suppression of stacking fault expansion in SiC PiN diodes by H+implantation

[20p-C306-6] Surface recombination velocities for oxidized 4H-SiC

△ [20p-C306-7] Electron mobility in sulfur-implanted n-type SiCinvestigated by Hall effect measurement

[20p-C306-8] One-step mirror finishing of SiC wafer by chitosan/diamond composite spherical microbeads

[20p-C306-9] Lowest Concentration of ClF3 gas for CVD Reactor Cleaning by Detaching SiC Film

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△ [20p-C306-7] Electron mobility in sulfur-implanted n-type SiC
investigated by Hall effect measurement

[20p-C306-9] Lowest Concentration of ClF₃ gas for CVD Reactor Cleaning by Detaching SiC Film