[21a-C301-1~10] 3.12 Semiconductor optical devices (formerly 3.13)

Wed. Sep 21, 2022 9:00 AM - 11:45 AM C301 (C301)

Takuro Fujii(NTT), Takeshi Fujisawa(Hokkaido University)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:00 AM - 9:15 AM

[21a-C301-1] Low Threshold Current 1.55 um-Band Quantum Dot Laser with InP(311)B Substrate

〇Atsushi Matsumoto¹, Kouichi Akahane¹, Shinya Nakajima¹, Toshimasa Umezawa¹, Naokatsu Yamamoto¹, Atsushi Kanno¹ (1.NICT)

9:15 AM - 9:30 AM

[21a-C301-2] 1.3 μm-Wavelength Lasers with Type-II GaInAs/GaAsSb/GaInAs “W”-Quantum Wells on GaAs Sub.

〇Takuma Fuyuki¹, Takashi Go¹, Daisuke Inoue¹, Hiroyuki Yoshinaga¹, Mitsuru Ekawa¹, Takashi Ishizuka¹, Susumu Yoshimoto¹, Peter Ludewig², Ada Baumner², Antje Ruiz Perez², Wolfgang Stolz² (1.Transmission Devices Lab., Sumitomo Electric Industries, Ltd., 2.NAsP III/V GmbH)

9:30 AM - 9:45 AM

[21a-C301-3] Well layer thickness dependence on threshold current of SCH-MQW laser diode on InP/Si substrate.

〇Ryosuke Yada¹, Kouji Agata¹, Shingo Ito¹, Liang Zhao¹, Sae Aoki¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

9:45 AM - 10:00 AM

[21a-C301-4] Numerical simulation of propagation loss by void in directly bonded InP/Si substrate

〇(M2)Liang Zhao¹, Koji Agata¹, Shingo Ito¹, Ryosuke Yada¹, Kazuhiko Shimomura¹ (1.Sophia Univ.)

10:00 AM - 10:15 AM

[21a-C301-5] Wide wavelength emission in mid-infrared region from InAs/GaSb superlattice grown by MOVPE method.

〇Yuto Iwakiri¹, Masakazu Arai¹, Fujisawa Takeshi², Koji Maeda¹ (1.Miyazaki Univ., 2.Hokkaido Univ.)

10:30 AM - 10:45 AM

[21a-C301-6] Deep etching of grating for DFB and DBR lasers

〇(M2)Ryumi Katsuhara¹, Ryouta Yabuki¹, Siim Heinsalu¹, Zhiping Ge¹, Atsushi Matsumoto², Kuichi Akahane², Yuichi Matsushima¹, Hiroshi Ishikawa¹, Katsuyuki Utaka¹ (1.Wasada Univ., 2.NICT)

10:45 AM - 11:00 AM

▲ [21a-C301-7] 1060nm Single-mode Bottom Emitting VCSEL Array for Multi-core Fiber Co-packaged Optics Transceivers

〇(DC)Liang Dong¹, Xiaodong Gu¹, Fumio Koyama¹ (1.Tokyo Tech)

11:00 AM - 11:15 AM

▲ [21a-C301-8] Characteristic Analysis of Isolation of Lateral-Electric-Field Electro-Absorption Modulator in GaAs by Proton Bombardment

〇(M2)Pengjun Yu¹, Kairi Atsugi¹, Jinkwan Kwoen², Yuichi MATSUSHIMA¹, kou Ishikawa¹, Yasuhiko Arakawa², Katsuyuki Utaka¹ (1.Waseda Univ, 2.Univ. of Tokyo)

11:15 AM - 11:30 AM

[21a-C301-9] Evaluation of the relationship between coupling length and oscillation characteristics
in InP-based microring lasers

〇Kenta Tsunashima¹, Canon Kawarai¹, Hiromasa Shimizu¹ (1.Tokyo Univ. of Agri. and Tech.)

11:30 AM - 11:45 AM

[21a-C301-10] Effect of deformation on statistical distribution of resonance frequencies in a chaotic cavity

〇Takehiro Fukushima¹ (1.Okayama Pref. Univ.)

Session information