Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

[21p-B201-1~16] 15.4 III-V-group nitride crystals

Wed. Sep 21, 2022 1:30 PM - 6:00 PM B201 (B201)

Ryuji Katayama(Osaka Univ.), Mitsuru Funato(Kyoto Univ.), Kanako Shojiki(Mie Univ.)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:30 PM - 1:45 PM

[21p-B201-1] [Young Scientist Presentation Award Speech] 230-nm Far-UV Second Harmonic Generationfrom HfO₂/AlN Transverse Quasi-Phase-Matched Channel Waveguide

〇Hiroto Honda¹, Kanako Shojiki^1,2, Kenjiro Uesugi^3,4, Miyake Hideto², Kazunori Serita⁵, Hironaru Murakami⁵, Masayoshi Tonouchi⁵, Masahiro Uemukai¹, Tomoyuki Tanikawa¹, Ryuji Katayama¹ (1.Grad. Sch. of Eng. Osaka Univ., 2.Grad. Sch. of Eng. Mie Univ., 3.MRPCO Mie Univ., 4.Grad. Sch. of RIS. Mie Univ., 5.ILE Osaka Univ.)

1:45 PM - 2:00 PM

[21p-B201-2] 230-nm Far-UV Second Harmonic Generation from Double-Layer Polarity Inverted AlN Transverse Quasi-Phase-Matched Channel Waveguide

〇Hiroto Honda¹, Kanako Shojiki^1,2, Kenjiro Uesugi^3,4, Hideto Miyake², Kazunori Serita⁵, Hironaru Murakami⁵, Masayoshi Tonouchi⁵, Masahiro Uemukai¹, Tomoyuki Tanikawa¹, Ryuji Katayama¹ (1.Grad. Sch. of Eng. Osaka Univ., 2.Grad. Sch. of Eng. Mie Univ., 3.MRPCO Mie Univ., 4.Grad. Sch. of RIS. Mie Univ., 5.ILE Osaka Univ.)

2:00 PM - 2:15 PM

[21p-B201-3] Fabrication of GaN transverse quasi phase matching photon pair generation device using MOVPE-based epitaxial polarity inversion technology

〇Kazuhisa Ikeda¹, Tomotaka Murata¹, Syuhei Ichikawa¹, Yasufumi Fujiwara¹, Masahiro Uemukai¹, Tomoyuki Tanikawa¹, Ryuji Katayama¹ (1.Osaka Univ.)

2:15 PM - 2:30 PM

△ [21p-B201-4] Design of Broadband Photon Pairs Generation Device using Vertical Microcavity Structure

〇Tomohiro Nakahara¹, Tomoaki Nambu¹, Yuma Yasuda¹, Shuhei Ichikawa¹, Yasufumi Fujiwara¹, Masahiro Uemukai¹, Tomoyuki Tanikawa¹, Ryuji Katayama¹ (1.Osaka Univ.)

2:30 PM - 2:45 PM

▲ [21p-B201-5] First-principles insight on the atomic arrangement of wurtzite (B, Al, In)_0.125Ga_0.875N and its implications to crystal stability.

Hiroshi Mizuseki¹, 〇Jessiel Siaron Gueriba², Melvin John Fernandez Empizo², Nobuhiko Sarukura², Yoshiyuki Kawazoe^3,4,5, Kazuhiro Ohkawa⁶ (1.KIST, 2.Osaka Univ., 3.Tohoku Univ., 4.SRM-IST, 5.SUT, 6.KAUST)

2:45 PM - 3:00 PM

▲ [21p-B201-6] Theoretical Study of Effects of Nitrogen Vacancy on Phonon Dispersions of III-Nitride Semiconductors

〇Ying Dou^1,2, Koji Shimizu^1,2, Hiroshi Fujioka^1,3, Satoshi Watanabe^1,2 (1.Tokyo Univ., 2.School of Eng., 3.IIS)

3:15 PM - 3:30 PM

△ [21p-B201-7] Optimization of growth conditions for n-type GaInN to improve optical properties of GaInN-based multi-quantum shells 2

〇Ayaka Shima¹, Nanami Nakayama¹, Lu Weifang², Sae Katsuro¹, Yukimi Jinno¹, Shiori Yamamura¹, Mizuki Takahashi¹, Yuki Yamanaka¹, Soma Inaba¹, Shiori Ii¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Satoshi Kamiyama¹ (1.Meijo Univ., 2.Xiamen Univ.)

3:30 PM - 3:45 PM

△ [21p-B201-8] Investigation of pinhole suppression on selective growth mask during quantum shell device growth

〇Shiori Yamamura¹, Nanami Nakayama¹, Yukimi Jinno¹, Sae Katsuro¹, Mizuki Takahashi¹, Yuki Yamanaka¹, Ayaka Shima¹, Shiori Ii¹, Soma Inaba¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Satoshi Kamiyama¹ (1.Meijo University)

3:45 PM - 4:00 PM

△ [21p-B201-9] Investigation of three-step growth of buried layer in multi-quantum shell LDs

〇Mizuki Takahashi¹, Shiori Yamamura¹, Yukimi Jinno¹, Nanami Nakayama¹, Sae Katsuro¹, Yuki Yamanaka¹, Shiori Ii¹, Ayaka Shima¹, Soma Inaba¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹, Satoshi Kamiyama¹ (1.Meijo Univ.)

4:00 PM - 4:15 PM

[21p-B201-10] Study on GaN growth by sputtering for MQS laser with tunnel junction

〇Yukimi Jinno¹, Shiori Yamamura¹, Shiori Ii¹, Mizuki Takahashi¹, Yuki Yamanaka¹, Sae Katsuro¹, Soma Inaba¹, Nanami Nakayama¹, Ayaka Shima¹, Junya Iihama², Yoshiro Kususe², Masami Mesuda², Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ., 2.Tosoh Corporation)

4:15 PM - 4:30 PM

△ [21p-B201-11] Fabrication of low contact resistivity electrodes on nitrogen polar GaN substrates and vertical GaN-based quantum shell devices

〇Shiori Ii¹, Yukimi Jinno¹, Sae Katsuro¹, Nanami Nakayama¹, Shiori Yamamura¹, Mizuki Takahashi¹, Yuki Yamanaka¹, Ayaka Shima¹, Soma Inaba¹, Satoshi Kamiyama¹, Tetsuya Takeuchi¹, Motoaki Iwaya¹ (1.Meijo Univ.)

4:45 PM - 5:00 PM

[21p-B201-12] Recombination dynamics of indirect excitons in hexagonal BN epilayers containing polytypic segments grown by CVD using carbon-free precursors

〇Shigefusa Chichibu¹, Kohei Shima¹, Kiyoshi Kikuchi¹, Naoki Umehara², Keisuke Takiguchi³, Yoshihiro Ishitani³, Kazuhiko Hara² (1.IMRAM-Tohoku Univ., 2.RIE, Shizuoka Univ., 3.Dept. EE, Chiba Univ.)

5:00 PM - 5:15 PM

[21p-B201-13] MOVPE growth of BN films on sapphire and high-temperature annealing

〇(M2)Ayaka Itani¹, Shigeyuki Kuboya², Shiyu Xiao¹, Kanako Shojiki¹, Kenjiro Uesugi^3,4, Hideto Miyake¹ (1.Grad. Sch. of Eng. Mie Univ, 2.SPORR Mie Univ, 3.MRPCO Mie Univ, 4.Grad. Sch. of RIS. Mie Univ)

5:15 PM - 5:30 PM

[21p-B201-14] Epitaxial growth of hexagonal Nb₂N on lattice-matched AlN

〇Atsushi Kobayashi¹, Shunya Kihira¹, Takahito Takeda², Masaki Kobayashi², Toru Akiyama³, Takahiro Kawamura³, Takayuki Harada⁴, Kohei Ueno¹, Hiroshi Fujioka¹ (1.IIS, The Univ. of Tokyo, 2.EEIS, The Univ. of Tokyo, 3.Mie Univ., 4.NIMS)

5:30 PM - 5:45 PM

△ [21p-B201-15] Study on Stable Source Supply for Cu₃N Growth by Mist CVD

〇(M1)Shogo Yoshida¹, Kai Yamada¹, Tomohiro Yamaguchi¹, Hiroki Nagai¹, Takeyoshi Onuma¹, Tohru Honda¹ (1.Kogakuin Univ.)

5:45 PM - 6:00 PM

[21p-B201-16] Growth of metal nitrides on N-polar GaN (000-1) for epitaxial Schottky junctions

〇Erina Ando¹, Kohei Ueno¹, Atsushi Kobayashi¹, Hiroshi Fujioka¹ (1.IIS,UTokyo)

Session information

[21p-B201-1~16] 15.4 III-V-group nitride crystals

[21p-B201-1] [Young Scientist Presentation Award Speech] 230-nm Far-UV Second Harmonic Generationfrom HfO₂/AlN Transverse Quasi-Phase-Matched Channel Waveguide

[21p-B201-2] 230-nm Far-UV Second Harmonic Generation from Double-Layer Polarity Inverted AlN Transverse Quasi-Phase-Matched Channel Waveguide

[21p-B201-3] Fabrication of GaN transverse quasi phase matching photon pair generation device using MOVPE-based epitaxial polarity inversion technology

△ [21p-B201-4] Design of Broadband Photon Pairs Generation Device using Vertical Microcavity Structure

▲ [21p-B201-5] First-principles insight on the atomic arrangement of wurtzite (B, Al, In)_0.125Ga_0.875N and its implications to crystal stability.

▲ [21p-B201-6] Theoretical Study of Effects of Nitrogen Vacancy on Phonon Dispersions of III-Nitride Semiconductors

△ [21p-B201-7] Optimization of growth conditions for n-type GaInN to improve optical properties of GaInN-based multi-quantum shells 2

△ [21p-B201-8] Investigation of pinhole suppression on selective growth mask during quantum shell device growth

△ [21p-B201-9] Investigation of three-step growth of buried layer in multi-quantum shell LDs

[21p-B201-10] Study on GaN growth by sputtering for MQS laser with tunnel junction

△ [21p-B201-11] Fabrication of low contact resistivity electrodes on nitrogen polar GaN substrates and vertical GaN-based quantum shell devices

[21p-B201-12] Recombination dynamics of indirect excitons in hexagonal BN epilayers containing polytypic segments grown by CVD using carbon-free precursors

[21p-B201-13] MOVPE growth of BN films on sapphire and high-temperature annealing

[21p-B201-14] Epitaxial growth of hexagonal Nb₂N on lattice-matched AlN

△ [21p-B201-15] Study on Stable Source Supply for Cu₃N Growth by Mist CVD

[21p-B201-16] Growth of metal nitrides on N-polar GaN (000-1) for epitaxial Schottky junctions

Authenticate

Session information

[21p-B201-1~16] 15.4 III-V-group nitride crystals

△ [21p-B201-4] Design of Broadband Photon Pairs Generation Device using Vertical Microcavity Structure

▲ [21p-B201-5] First-principles insight on the atomic arrangement of wurtzite (B, Al, In)0.125Ga0.875N and its implications to crystal stability.

▲ [21p-B201-6] Theoretical Study of Effects of Nitrogen Vacancy on Phonon Dispersions of III-Nitride Semiconductors

△ [21p-B201-7] Optimization of growth conditions for n-type GaInN to improve optical properties of GaInN-based multi-quantum shells 2

△ [21p-B201-8] Investigation of pinhole suppression on selective growth mask during quantum shell device growth

△ [21p-B201-9] Investigation of three-step growth of buried layer in multi-quantum shell LDs

△ [21p-B201-11] Fabrication of low contact resistivity electrodes on nitrogen polar GaN substrates and vertical GaN-based quantum shell devices

△ [21p-B201-15] Study on Stable Source Supply for Cu3N Growth by Mist CVD

Authenticate

▲ [21p-B201-5] First-principles insight on the atomic arrangement of wurtzite (B, Al, In)_0.125Ga_0.875N and its implications to crystal stability.

△ [21p-B201-15] Study on Stable Source Supply for Cu₃N Growth by Mist CVD