[20a-A202-1~8] 3.1 Basic optics and frontier of optics (merged with formerly 3.2 Equipment optics and materials)

[20a-A202-4] Photoinduced optical bleaching in InN films

〇Junjun Jia¹, Takashi Yagi², Mari Mizutani³, Naomi Yamada³, Toshiki Makimoto⁴ (1.GCSE, Waseda Univ., 2.AIST, 3.Chubu Univ., 4.ASE, Waseda Univ.)

Keywords:Optical Bleaching, Hot Electron, Electron-Phonon Interaction

Simultaneous measurements of transient transmission and reflectivity were performed in the unintentionally doped InN film to reveal ultrafast optical bleaching and its recovery behavior under intense laser irradiation. The optical bleaching is attributed to Pauli blocking due to the occupation of photoexcited electrons at the probing energy level. Our simulations reveal that the occupation probability calculated from a hot Fermi-Dirac distribution can be used to estimate the transition transmittance. Moreover, the interplay between dielectric constant of materials and collective motion of excited carriers gives rise to complex spectral characteristics of transient reflectivity, which opens up a new way of tailoring dielectric constant of materials.