[20a-B101-1~10] 10.3 スピンデバイス・磁気メモリ・ストレージ技術

▲ [20a-B101-8] Enhancement in perpendicular magnetic anisotropy at the Fe/MgO interface by an ultrathin LiF layer insertion

〇Takayuki Nozaki¹、Tomohiro Nozaki¹、Tatsuya Yamamoto¹、Makoto Konoto¹、Atsushi Sugihara¹、Kay Yakushiji¹、Hitoshi Kubota¹、Akio Fukushima¹、Shinji Yuasa¹ (1.AIST)

キーワード：Interfacial perpendicular magnetic anisotropy, Tunnel magnetoresistance

Interfacial perpendicular magnetic anisotropy (PMA) plays an important role in present spintronic devices, such as perpendicular magnetic tunnel junction for magnetoresistive random access memories (MRAMs). Further improvement in the interfacial PMA is demanded for extending the scaling limit of MRAM. In this talk, we report the enhancement of interfacial PMA by inserting an ultrathin LiF layer at the Fe/MgO interface. Large intrinsic PMA value, K_i,0 of about 2.8 mJ/m² was obtained in epitaxial Cr/Fe/LiF/MgO structures with maintaining coherent TMR effect.