The 83rd JSAP Autumn Meeting 2022

Presentation information

Oral presentation

6 Thin Films and Surfaces » 6.1 Ferroelectric thin films

[20a-B103-1~12] 6.1 Ferroelectric thin films

Tue. Sep 20, 2022 9:00 AM - 12:15 PM B103 (B103)

Tomoaki Yamada(Nagoya Univ.), Hiroshi Uchida(Sophia Univ.)

9:00 AM - 9:15 AM

[20a-B103-1] Dielectric Properties of BaxSr1xTiO3 (x = 0.5) Epilayer Transferred on PET Substrate

〇(M2)RUI YU1, Lizhikun Gong1, Hiromichi Ohta2, Tsukasa Katayama2,3 (1.IST- Hokkaido Univ, 2.RIES-Hokkaido Univ, 3.JST-PRESTO)

Keywords:dielectric constant, film, sacrificial layer

Dielectric materials show useful characteristics and have been widely applied for industrial applications such as capacitors, antennas, and sensors. BaxSr1−xTiO3 (BST) is one of the most applied dielectric materials due to its high permittivity (εr) and large tunability (ε(E = 0)/ε(E)). These properties as well as the Curie temperature can be controlled by changing the Ba/Sr ratio x. At the last conference, we reported that BST (x = 0.25) epilayer on SrTiO3 substrate was successfully transferred on PET substrate using the peel-off and transfer method. In this study, we show the preparation and dielectric properties of BST (x = 0.5) epilayer transferred on PET substrate.